Circuit Design for Reliability
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This paper is intended not only to give the reliability analyst cognizance of basic design problems and troublesome circuits, but also, to aid him in formulating a design review program. Subscribers can view annotate, and download all of SAE's content. Browse Publications Technical Papers Citation: Franciscovich, P.
Download Citation. Overvoltage is a failure process initiated by the excessive power supply transient or electrostatic discharge. If overvoltage occurs on the gate, it initiates oxide voltage.
Oxide wearout is a failure process initiated by stressed gate oxides. The circuit fails because the transistors become too slow, and mismatches too large. Oxide wearout includes hot carriers, negative bias temperature instability, and time-dependent dielectric breakdown. Interconnect wearout is a failure process initiated by high currents flowing through the wires.
For wires carrying DC currents the main reason of failure is electromigration, for wires carrying AC currents it is self-heating. Previous Post. Historically, system designers would use a single heat source to model the behavior of a chip within a system. However, understanding spatial thermal characteristics of the IC in a mobile chassis is critical to the success of the passive cooling scheme.
System-centric platforms such as IcePak from Ansys provide the capability for system level thermal analysis on the board and chassis. IC-centric platforms such as Sentinel-TI from Ansys provide the capability to analyze the thermal behavior of the IC within the context of the package boundary constraints.
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Electromigration limits have an exponential dependency on the operating temperature of the die. Small variations in operating temperature can cause large variations in EM failures during analysis. It is important to consider an accurate thermal profile of the die during EM analysis.
Die centric platforms such as RedHawk and Totem from Ansys provide abilities to extract and analyze the power and signal EM with the impact of an on-die thermal profile. The Future of Reliability Verification Reliability verification techniques have drastically changed from one process node to another. As we scale into subnm range, complex multi-physics simulation capabilities will need to be developed for reliability analysis.
Statistical failure models for electromigration will need to be developed with various operating scenarios or end-use applications.
Multi-physics platforms that can simulate complex failure mechanisms and apply statistical models will be the new wave of capabilities. Experts at the Table: What are the limitations today that are preventing 3D-ICs from becoming mainstream, and which companies pushing to make it happen? Experts at the Table: The challenges to build a single chip to handle future autonomous functions of a vehicle span many areas across the design process.
Even before fully autonomous vehicles blanket the road there is major upheaval at all levels of the industry.
Design Reliable and Robust PCBs
Half nodes, different transistor types, and numerous other options are adding uncertainty everywhere. Rollouts are constrained by the amount of power consumed, and that may get worse before it gets better. Search for:.
Challenges To Building Level 5 Automotive Chips Experts at the Table: The challenges to build a single chip to handle future autonomous functions of a vehicle span many areas across the design process.